Author:
Quan W.,Arabhavi A. M.,Marti D.,Hamzeloui Sara,Ostinelli O.,Bolognesi C.R.
Cited by
9 articles.
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1. Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs;IEEE Microwave and Wireless Technology Letters;2024-08
2. G-Band Load-Pull Characterization of High-Efficiency Emitter-Fin InP/GaAsSb DHBTs;2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM);2024-05-20
3. Inductive Source Degeneration in 40-nm GaN HEMTs for Operation Above 100 GHz;IEEE Transactions on Microwave Theory and Techniques;2024-01
4. Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
5. Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16