Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures

Author:

Hamzeloui S.1,Ciabattini F.1,Arabhavi A. M.1,Quan W.1,Marti D.1,Ebrahimi M.1,Ostinelli O.1,Bolognesi C. R.1

Affiliation:

1. ETH-Zürich,Millimeter-Wave Electronics (MWE) Group,Zurich,Switzerland,8092

Publisher

IEEE

Reference15 articles.

1. Harmonic distortion analysis of InP HBTs with 650 GHz fmax for high data rate communication systems;sakalas;2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS),2017

2. Influence of collector design on InGaP/GaAs HBT linearity

3. High Speed Type-II GaAsSb/InP DHBTs for mixed-signal IC Applications;xu;PhD Thesis UIUC,2014

4. A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs;IEEE Microwave and Wireless Technology Letters;2024-08

2. A Ka-Band InP HBT MMIC Power Amplifier With 19.8:1 IP3/Pdc LFOM at 48 GHz;IEEE Journal of Solid-State Circuits;2023-09

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