A Monolithic GaN Power Stage with Low Propagation Delay and High Reliability Level Shifting for High Frequency Power Converter
Author:
Affiliation:
1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Device,Chengdu,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10181241/10181318/10181989.pdf?arnumber=10181989
Reference15 articles.
1. 33.1 A Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch with Temperature-compensated Fast Turn-on Technique for Improving Reliability
2. A Domino Bootstrapping 12V GaN Driver for Driving an On-Chip 650V eGaN Power Switch for 96% High Efficiency
3. A Monolithic GaN Direct 48V/1V AHB Switching Power IC with Auto-Lock Auto-Break Level Shifting, Self-Bootstrapped Hybrid Gate Driving, and On-Die Temperature Sensing
4. Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control
5. 18.2 A Monolithic E-Mode GaN 15W 400V Offline Self-Supplied Hysteretic Buck Converter with 95.6% Efficiency
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Monolithic GaN Power Stage With Common-Mode Transient Immunity and Negative Voltage Operation Design for High-Frequency Power Converters;IEEE Transactions on Power Electronics;2024-07
2. A 500-V, 6.25-MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies;IEEE Solid-State Circuits Letters;2024
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