33.1 A Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch with Temperature-compensated Fast Turn-on Technique for Improving Reliability

Author:

Chen Hsuan-Yu,Kao Yu-Yung,Zhang Zhi-Qiang,Liao Cheng-Hsiang,Yang Hong-Yuan,Hsu Ming-Sheng,Chen Ke-Horng,Lin Ying-Hsi,Lin Shian-Ru,Tsai Tsung-Yen

Publisher

IEEE

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Thermal Modelling of Monolithic Half-bridge IC with Integrated Gate Drivers and Power e-HEMT Based on GaN-on-SOI Platform;2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE);2023-11-10

2. A 600-V GaN Active Gate Driver with Level Shifter Common-Mode Noise Sensing for Built-in dV/dt Self-Adaptive Control;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

3. A Monolithic GaN Power Stage with Low Propagation Delay and High Reliability Level Shifting for High Frequency Power Converter;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21

4. Demonstration of a Power-efficient and Cost-effective Power Delivery Architecture for Heterogeneously Integrated Wafer-scale Systems;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

5. A GaN-on-Si Gate Driver with 14.7X Reduction in Tailing Current Loss and 37.0% Reduction of Reverse Conduction Loss;2023 IEEE Custom Integrated Circuits Conference (CICC);2023-04

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