A Monolithic GaN Direct 48V/1V AHB Switching Power IC with Auto-Lock Auto-Break Level Shifting, Self-Bootstrapped Hybrid Gate Driving, and On-Die Temperature Sensing-Reference-Cited by-同舟云学术

A Monolithic GaN Direct 48V/1V AHB Switching Power IC with Auto-Lock Auto-Break Level Shifting, Self-Bootstrapped Hybrid Gate Driving, and On-Die Temperature Sensing

Published:2022-02-20 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Yan Dong¹,Ma D. Brian¹

Affiliation:

1. University of Texas,Dallas, Richardson,TX

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9731529/9731102/09731727.pdf?arnumber=9731727

Reference6 articles.

1. Development of GaN Monolithic Integrated Circuits for Power Conversion

2. A Domino Bootstrapping 12V GaN Driver for Driving an On-Chip 650V eGaN Power Switch for 96% High Ffficiency;chen;IEEE Symp VLSI Circuits,2020

3. 18.2 A Monolithic E-Mode GaN 15W 400V Offline Self-Supplied Hysteretic Buck Converter with 95.6% Efficiency

4. 80V, 15A ePower™ Stage Preliminary,0

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