A 200V Monolithic GaN Dynamic Floating Voltage Level Shifter with Nanosecond Propagation Delays and Noise-Immune Slewing Control
Author:
Affiliation:
1. The University of Texas at Dallas,Integrated Power Electronics System Laboratory,Department of Electrical and Computer Engineering,Richardson,TX,USA,75080
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10509012/10509018/10509049.pdf?arnumber=10509049
Reference5 articles.
1. A New Design Technique for Sub-Nanosecond Delay and 200 V/ns Power Supply Slew-Tolerant Floating Voltage Level Shifters for GaN SMPS
2. High-Speed Dynamic Level Shifter for High-Side Bootstrapped Gate Driver in High-Voltage Buck Regulators
3. A Monolithic GaN Direct 48V/1V AHB Switching Power IC with Auto-Lock Auto-Break Level Shifting, Self-Bootstrapped Hybrid Gate Driving, and On-Die Temperature Sensing
4. A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V Monolithic GaN Power IC
5. Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 500-V, 6.25-MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies;IEEE Solid-State Circuits Letters;2024
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