A High-Speed Level Shifter with dV<sub>s</sub>/dt Noise Immunity Enhancement Structure for 200V Monolithic GaN Power IC-Reference-Cited by-同舟云学术

A High-Speed Level Shifter with dV_s/dt Noise Immunity Enhancement Structure for 200V Monolithic GaN Power IC

Published:2023-05-28 Issue: Volume: Page:
ISSN:
Container-title:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Zheng Yifei¹,Yuan Qing¹,Song Deyuan¹,Ying Yutao¹,Zhu Jing²,Sun Weifeng¹,Zhang Long¹,Li Sheng¹,Wang Denggui³,Zhou Jianjun³,Zhang Sen⁴,He Nailong⁴

Affiliation:

1. National ASIC System Engineering Research Center, Southeast University,Nanjing,China,210096

2. Wuxi Chipown Micro-electronics limited,Wuxi,China

3. Nanjing Electronic Devices Institute,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing,China,210016

4. CSMC Technologies Corporation,Technology development department,Wuxi,China

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147560.pdf?arnumber=10147560

Reference9 articles.

1. A New Design Technique for Sub-Nanosecond Delay and 200 V/ns Power Supply Slew-Tolerant Floating Voltage Level Shifters for GaN SMPS

2. Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter

3. A Monolithic GaN Power IC With On-Chip Gate Driving, Level Shifting, and Temperature Sensing, Achieving Direct 48-V/1-V DC–DC Conversion

4. A 100 W and 91% GaN-based class-E wireless-power-transfer transmitter with differential-impedancematching control for charging multiple devices;xie;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2019

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1. A Monolithic GaN Power Stage With Common-Mode Transient Immunity and Negative Voltage Operation Design for High-Frequency Power Converters;IEEE Transactions on Power Electronics;2024-07

2. Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters;Electronics;2024-04-03

3. A 200V Monolithic GaN Dynamic Floating Voltage Level Shifter with Nanosecond Propagation Delays and Noise-Immune Slewing Control;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

4. A 500-V, 6.25-MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies;IEEE Solid-State Circuits Letters;2024

5. A 200-V Half-Bridge Monolithic GaN Power IC With High-Speed Level Shifter and TEXPRESERVE0 Noise Immunity Enhancement Structure;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2023