Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control-Reference-Cited by-同舟云学术

Monolithic GaN-Based Driver and GaN Switch With Diode-Emulated GaN Technique for 50-MHz Operation and Sub-0.2-ns Deadtime Control

Published:2022-12 Issue:12 Volume:57 Page:3877-3888
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Wang Tz-Wun¹,Kao Yu-Yung¹,Hung Sheng-Hsi¹,Wen Yong-Hwa¹,Yang Tzu-Hsien¹,Li Si-Yi¹,Chen Ke-Horng¹^ORCID,Zheng Kuo-Lin¹,Lin Ying-Hsi²,Lin Shian-Ru²,Tsai Tsung-Yen²

Affiliation:

1. Institute of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Realtek Semiconductor Corporation, Hsinchu, Taiwan

Funder

Ministry of Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9962295/09870744.pdf?arnumber=9870744

Reference21 articles.

1. A 6.78 MHz and 90% Efficiency Resonant Wireless Power Supply Technique With the Dual Voltage/Current Tuning Inductance to Supply 30 cm Short-Distance Base Stations for 5G Communications

2. A 20 V 8.4 W 20 MHz four-phase GaN DC–DC converter with fully on-chip dual-SR bootstrapped GaN FET driver achieving 4 ns constant propagation delay and 1 ns switching rise time;song;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2015

3. A 10 MHz 3-to-40V VIN tri-slope gate driving GaN DC–DC converter with 40.5 dB?V spurious noise compression and 79.3% ringing suppression for automotive applications;ke;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2017

4. A 3-to-40 V VIN 10-to-50 MHz 12 W isolated GaN driver with self-excited tdead minimizer achieving 0.2 ns/0.3 ns tdead, 7.9% minimum duty ratio and 50 V/ns CMTI;ke;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2018

5. A 3-to-40-V Automotive-Use GaN Driver With Active Bootstrap Balancing and V SW Dual-Edge Dead-Time Modulation Techniques

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1. Bootstrap Capacitor Charge Control Method for GaN-based 4-Switch Buck-Boost Converter;2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2023-12-04

2. A Monolithic Integrated E-Mode GaN 48V-to-1V DC-DC Buck Converter with PWM Control;2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2023-10-27

3. GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-06

4. Monolithic FET-Controlled GaN Driver with Pre-Boosting and Robust Dead Time Control for DToF LiDAR Application;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

5. A Monolithic GaN Power Stage with Low Propagation Delay and High Reliability Level Shifting for High Frequency Power Converter;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21