A 1.3 dB NF 7.7 mW 28 GHz LNA in 22 nm FDSOI Technology using Redistribution Layer Gate Inductor
Author:
Affiliation:
1. Design Enablement Team, Global Foundries,Bangalore,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117590/10117577/10118298.pdf?arnumber=10118298
Reference14 articles.
1. LNA Design with CMOS SOI Process-l.4dB NF K/Ka band LNA
2. A Wideband Variable Gain LNA With High OIP3 for 5G Using 40-nm Bulk CMOS
3. A Millimeter-Wave LNA in 45nm CMOS SOI with Over 23dB Peak Gain and Sub-3dB NF for Different 5G Operating Bands and Improved Dynamic Range
4. A 1.7-dB Minimum NF, 22–32-GHz Low-Noise Feedback Amplifier With Multistage Noise Matching in 22-nm FD-SOI CMOS
5. Experimental Analysis of the Effect of Metal Thickness on the Quality Factor in Integrated Spiral Inductors for RF ICs
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1. Utilizing the Current Reuse approach for CMOS LNA with 45nm Technology Features Better Noise Figure and Linearity;2023 International Conference on Evolutionary Algorithms and Soft Computing Techniques (EASCT);2023-10-20
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