LNA Design with CMOS SOI Process-l.4dB NF K/Ka band LNA-Reference-Cited by-同舟云学术

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LNA Design with CMOS SOI Process-l.4dB NF K/Ka band LNA

Published:2018-06 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE/MTT-S International Microwave Symposium - IMS
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Author:

Li Chaojiang,El-Aassar Omar,Kumar Arvind,Boenke Myra,Rebeiz Gabriel M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8417183/8439129/08439132.pdf?arnumber=8439132

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A gm/ID-Based Low-Power LNA for Ka-Band Applications;Sensors;2024-04-21

2. Crosstalk Impact on CMOS Low Noise Amplifiers from RF to millimeter Wave;2024 Panhellenic Conference on Electronics & Telecommunications (PACET);2024-03-28

3. Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies;New Materials and Devices Enabling 5G Applications and Beyond;2024

4. FD-SOI and RF-SOI technologies for 5G;New Materials and Devices Enabling 5G Applications and Beyond;2024

5. Design of Ka-Band Power Amplifier and Low-Noise Amplifier for 5G Communication Systems;Signals and Communication Technology;2024

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