Affiliation:
1. Institute for Applied Microelectronics (IUMA), Universidad de Las Palmas de Gran Canaria, 35001 Las Palmas de Gran Canaria, Spain
Abstract
This article presents the design of a low-power low noise amplifier (LNA) implemented in 45 nm silicon-on-insulator (SOI) technology using the gm/ID methodology. The Ka-band LNA achieves a very low power consumption of only 1.98 mW andis the first time the gm/ID approach is applied at such a high frequency. The circuit is suitable for Ka-band applications with a central frequency of 28 GHz, as the circuit is intended to operate in the n257 frequency band defined by the 3GPP 5G new radio (NR) specification. The proposed cascode LNA uses the gm/ID methodology in an RF/MW scenario to exploit the advantages of moderate inversion region operation. The circuit occupies a total area of 1.23 mm2 excluding pads and draws 1.98 mW from a DC supply of 0.9 V. Post-layout simulation results reveal a total gain of 11.4 dB, a noise figure (NF) of 3.8 dB, and an input return loss (IRL) better than 12 dB. Compared to conventional circuits, this design obtains a remarkable figure of merit (FoM) as the LNA reports a gain and NF in line with other approaches with very low power consumption.
Reference44 articles.
1. Razavi, B. (2011). RF Microelectronics, Prentice Hall Press. [2nd ed.].
2. Lee, T.H. (2004). The Design of CMOS Radio-Frequency Integrated Circuits, Cambridge University Press.
3. Yeom, K.-W. (2015). Microwave Circuit Design: A Practical Approach Using ADS, Prentice Hall.
4. Piccinni, G., Avitabile, G., Coviello, G., and Talarico, C. (2016, January 27–30). Distributed amplifier design for UWB positioning systems using the gm over id methodology. Proceedings of the 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), Lisbon, Portugal.
5. Elmeligy, K., and Omran, H. (2022). Fast Design Space Exploration and Multi-Objective Optimization of Wide-Band Noise-Canceling LNAs. Electronics, 11.