A Millimeter-Wave LNA in 45nm CMOS SOI with Over 23dB Peak Gain and Sub-3dB NF for Different 5G Operating Bands and Improved Dynamic Range-Reference-Cited by-同舟云学术

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A Millimeter-Wave LNA in 45nm CMOS SOI with Over 23dB Peak Gain and Sub-3dB NF for Different 5G Operating Bands and Improved Dynamic Range

Published:2021-06-07 Issue: Volume: Page:
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Container-title:2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Li Sensen,Huang Tzu-Yuan,Liu Yuqi,Yoo Hyunjin,Na Yoosam,Hur Youngsik,Wang Hua

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9489353/9490399/09490455.pdf?arnumber=9490455

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 28 GHz Compact LNAs With 1.9 dB Minimum NF Using Folded Three-Coil Transformer and Dual-Feedforward Techniques for Phased Array Systems;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-08

2. Design of 25-32 GHz low noise amplifier in a 55nm CMOS silicon-on-insulator technology;Fourth International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2024);2024-06-05

3. An analytical approach to designing millimeter‐wave LNAs with transformer‐based matching networks;Microwave and Optical Technology Letters;2024-02

4. Realizing Joint Communication and Sensing RF Receiver Front-Ends: A Survey;IEEE Access;2024

5. Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies;New Materials and Devices Enabling 5G Applications and Beyond;2024

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