SEE on Different Layers of Stacked-SRAMs-Reference-Cited by-同舟云学术

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SEE on Different Layers of Stacked-SRAMs

Published:2015-12 Issue:6 Volume:62 Page:2673-2678
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Gupta V.,Bosser A.,Tsiligiannis G.,Rousselet M.,Mohammadzadeh A.,Javanainen A.,Virtanen A.,Puchner H.,Saigne F.,Wrobel F.,Dilillo L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/7348735/07348951.pdf?arnumber=7348951

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Methods for Proton Direct Ionization SEU Characterization and Orbital Error-Rate Estimation;IEEE Transactions on Nuclear Science;2024-08

2. Proton Direct Ionization in Sub-Micron Technologies: Test Methodologies and Modeling;IEEE Transactions on Nuclear Science;2023-04

3. Simulation test technique for nuclear and space radiation effects;SCIENTIA SINICA Physica, Mechanica & Astronomica;2023-01-01

4. Ultra-High-Energy Heavy Ion Induced Single Event Effect of TSV-Based 3D Integrated SOI SRAM Circuits;2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS);2022-10-03

5. Scaling Trends of Digital Single-Event Effects: A Survey of SEU and SET Parameters and Comparison With Transistor Performance;IEEE Transactions on Nuclear Science;2021-02

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