Ultra-High-Energy Heavy Ion Induced Single Event Effect of TSV-Based 3D Integrated SOI SRAM Circuits-Reference-Cited by-同舟云学术

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Ultra-High-Energy Heavy Ion Induced Single Event Effect of TSV-Based 3D Integrated SOI SRAM Circuits

Published:2022-10-03 Issue: Volume: Page:1-4
ISSN:
Container-title:2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Author:

Zhang Junjun¹,Liu Fanyu²,Li Bo²,Gao Jiantou²,Zhao Peixiong³,Liu Jie³,Luo Jiajun²

Affiliation:

1. Institute of Microelectronics, University of Chinese Academy of Sciences and Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing,China,100029

2. Chinese Academy of Sciences,Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices,Beijing,China,100029

3. Chinese Academy of Sciences,Institute of Modern Physics,Gansu,China,730099

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10412245/10412349/10412392.pdf?arnumber=10412392

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