Trends and Future Challenges of 3D NAND Flash Memory
Author:
Affiliation:
1. Semiconductor R&D Center Samsung Electronics,Hwasung,Korea
2. Device Solution CTO Samsung Electronics,Hwasung,Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10145914/10145815/10145825.pdf?arnumber=10145825
Reference17 articles.
1. 3D NAND Falsh Status and Trends;heineck;IMW Tech Dig,2022
2. The Smallest Engine Transforming Humanity: The Past, Present, and Future
3. Ferroelectric field-effect transistors based on HfO2: a review
4. Prospective Innovation of DRAM, Flash, and Logic Technologies for Digital Transformation (DX) Era
5. Higly eliable Cell Characteristics with CSOB(Channelhole Sidewall ONO Butting) Scheme for 7th generation 3D-NAND;j kang;IEDM Tech Dig,2021
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Novel Channel Preparation Scheme to Optimize Program Disturbance in Three-Dimensional NAND Flash Memory;Micromachines;2024-01-31
2. Low global warming C5F10O isomers for plasma atomic layer etching and reactive ion etching of SiO2 and Si3N4;Plasma Processes and Polymers;2024-01-20
3. Roadmap for ferroelectric domain wall memory;Microstructures;2024-01-12
4. High-Density 3-D NAND Cell Array Design With Hybrid Bonding;IEEE Transactions on Electron Devices;2023-11
5. Silicon-Based Charge Trapping Memory Devices for Next-Generation Flexible Electronics Application;IEEE Journal on Flexible Electronics;2023-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3