Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V-Reference-Cited by-同舟云学术

Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Seki Harumi¹,Ichihara Reika¹,Higashi Yusuke¹,Nakasaki Yasushi¹,Saitoh Masumi¹,Suzuki Masamichi¹

Affiliation:

1. Institute of Memory Technology R&D Kioxia Corporation,Yokohama,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118083.pdf?arnumber=10118083

Reference7 articles.

1. Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory

2. Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors;frutuoso;Proc IEEE International Reliability Physics Symposium (IRPS),2022

3. Accurate Picture of Cycling Degradation in HfO₂-FeFET Based on Charge Trapping Dynamics Revealed by Fast Charge Centroid Analysis

4. Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation

5. A New Method to Extract the Charge Centroid in the Program Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories

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3. Recovery of cycling-induced degradation of interfacial SiO₂ in HfO₂-FeFET and its impact on retention characteristics;Japanese Journal of Applied Physics;2024-01-08