A New Method to Extract the Charge Centroid in the Program Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference2 articles.
1. Experimental Characterization of the Vertical Position of the Trapped Charge in Si Nitride-Based Nonvolatile Memory Cells
2. Simple technique for charge centroid measurement in MNOS capacitors
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Recovery of cycling-induced degradation of interfacial SiO2 in HfO2-FeFET and its impact on retention characteristics;Japanese Journal of Applied Physics;2024-01-08
2. Fabrication of metal/oxide/fluorographene/oxide/silicon capacitors and their charge trapping properties;Japanese Journal of Applied Physics;2023-03-23
3. Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
4. Accurate Picture of Cycling Degradation in HfO2-FeFET Based on Charge Trapping Dynamics Revealed by Fast Charge Centroid Analysis;2021 IEEE International Electron Devices Meeting (IEDM);2021-12-11
5. HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory;Japanese Journal of Applied Physics;2021-02-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3