Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations
Author:
Affiliation:
1. KU Leuven,Leuven,Belgium,3001
2. imec,Leuven,Belgium,3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117955.pdf?arnumber=10117955
Reference22 articles.
1. SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection
2. Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices
3. Time-Dependent Dielectric Breakdown and Stress-Induced Leakage Current Characteristics of 0.7-nm-EOT $\hbox{HfO}_{2}$ pFETs
4. Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS
5. A new quantitative hydrogen-based model for ultra-thin oxide breakdown
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