SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection-Reference-Cited by-同舟云学术

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SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection

Published:2008-04 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE International Reliability Physics Symposium
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Author:

O'Connor R.,Pantisano L.,Degraeve R.,Kauerauf T.,Kaczer B.,Roussel Ph. J.,Groeseneken G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4550747/4558854/04558906.pdf?arnumber=4558906

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films;Applied Physics Letters;2023-03-27

2. Analysis of TDDB lifetime projection in low thermal budget HfO₂/SiO₂ stacks for sequential 3D integrations;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Random Telegraph Noise Nano-spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy Techniques;Noise in Nanoscale Semiconductor Devices;2020

4. Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process;Chinese Physics B;2017-08

5. Büttiker Probe-Based Modeling of TDDB: Application to Dielectric Breakdown in MTJs and MOS Devices;IEEE Transactions on Electron Devices;2017-08

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