Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5482567/5488659/05488730.pdf?arnumber=5488730
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Time-Dependent Dielectric Breakdown in 45-nm PD-SOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications;IEEE Transactions on Device and Materials Reliability;2023-12
2. Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
3. Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation;Journal of Applied Physics;2022-06-21
4. BTI Analysis Tool—Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation;IEEE Transactions on Electron Devices;2018-02
5. Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC–AC Experimental Conditions;IEEE Transactions on Electron Devices;2018-01
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