A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs
Author:
Affiliation:
1. Universitá degli Studi di Modena e Reggio Emilia,Dipartimento di Ingegneria “Enzo Ferrari”,Modena,MO,Italy,41125
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117832.pdf?arnumber=10117832
Reference30 articles.
1. The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena
2. Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study
3. Migration of oxygen vacancy in HfO2 and across the HfO2∕SiO2 interface: A first-principles investigation
4. New observations on complex RTN in scaled high-κ/metal-gate MOSFETs — The role of defect coupling under DC/AC condition
5. A Versatile CMOS Transistor Array IC for the Statistical Characterization of Time-Zero Variability, RTN, BTI, and HCI
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1. Statistical Modeling of Time-Dependent Post-Programming Conductance Drift in Analog RRAM;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
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