The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena
Author:
Affiliation:
1. Università degli Studi di Modena e Reggio Emilia,Dipartimento di Ingegneria "Enzo Ferrari",Modena (MO),Italy,41125
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764472.pdf?arnumber=9764472
Reference19 articles.
1. Random telegraph noise: Measurement, data analysis, and interpretation
2. A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks
3. Random Telegraph Signal Phenomenology;simoen;Random Telegraph Signals in Semiconductor Devices,2016
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