Ultrathin Native Oxide by Barrier Layer Oxidation as Gate Dielectric for AlInN/GaN MIS-HEMTs-Reference-Cited by-同舟云学术

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Ultrathin Native Oxide by Barrier Layer Oxidation as Gate Dielectric for AlInN/GaN MIS-HEMTs

Published:2020-11-26 Issue: Volume: Page:
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Container-title:2020 5th IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Kushwah Bhuvnesh¹,Srikanth Kanaga²,DasGupta Nandita²,DasGupta Amitava²

Affiliation:

1. Intel Technology India Pvt Ltd,India

2. Indian Institute of Technology Madras,Microelectronics and MEMS Laboratory,Department of Electrical Engineering

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9776592/9776648/09776963.pdf?arnumber=9776963

Reference15 articles.

1. Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

2. Thermal oxidation of lattice matched InAlN/GaN heterostructures

3. Electronic and crystallographic structure of γ-alumina thin films

4. Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals;kim;Applied Physics Letters,2010

5. An electron spectroscopy study of the growth and thermally activated diffusion of nickel thin films on Al(111) and Al2O3/Al(111)

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1. Thin Film Analysis After Oxidation;Handbook of Emerging Materials for Semiconductor Industry;2024

2. Oxidation;Handbook of Emerging Materials for Semiconductor Industry;2024

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