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Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

  • Published:2011-10-15 Issue:8 Volume:110 Page:084501
  • ISSN:0021-8979
  • Container-title:Journal of Applied Physics
  • language:en
  • Short-container-title:Journal of Applied Physics

Author:

Eickelkamp M.,Weingarten M.,Rahimzadeh Khoshroo L.,Ketteniss N.,Behmenburg H.,Heuken M.,Donoval D.,Chvála A.,Kordoš P.,Kalisch H.,Vescan A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxidation Behavior of InAlN during Rapid Thermal Annealing;physica status solidi (a);2021-08-16

2. Ultrathin Native Oxide by Barrier Layer Oxidation as Gate Dielectric for AlInN/GaN MIS-HEMTs;2020 5th IEEE International Conference on Emerging Electronics (ICEE);2020-11-26

3. Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs;IEEE Transactions on Device and Materials Reliability;2020-09

4. Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation;Japanese Journal of Applied Physics;2019-09-13

5. Control of plasma-CVD SiO2/InAlN interface by ultrathin atomic-layer-deposited Al2O3 interlayer;Japanese Journal of Applied Physics;2019-06-13
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