Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs-Reference-Cited by-同舟云学术

Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs

Published:2022 Issue: Volume:10 Page:474-480
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Yang Ling¹^ORCID,Lu Hao¹^ORCID,Zhang Meng¹^ORCID,Niu Xuerui¹^ORCID,Shi Chuzhou²^ORCID,Hou Bin¹^ORCID,Mi Minhan¹^ORCID,Wu Mei¹^ORCID,Zhu Qing¹^ORCID,Lu Yang¹^ORCID,Lv Ling¹^ORCID,Cheng Kai³,Ma Xiaohua¹^ORCID,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China

2. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China

3. Enkris Semiconductor Inc., Suzhou, China

Funder

National Natural Science Foundation of China

China National Postdoctoral Program for Innovative Talents

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09797808.pdf?arnumber=9797808

Reference20 articles.

1. 650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

2. Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers

3. AlGaN/GaN high electron mobility transistors with InGaN back-barriers

4. Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors

5. AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity

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