650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode-Reference-Cited by-同舟云学术

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650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

Published:2018-02 Issue:2 Volume:39 Page:260-263
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lei Jiacheng^ORCID,Wei Jin^ORCID,Tang Gaofei^ORCID,Zhang Zhaofu^ORCID,Qian Qingkai,Zheng Zheyang^ORCID,Hua Mengyuan^ORCID,Chen Kevin J.^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8269808/08214234.pdf?arnumber=8214234

Cited by 63 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current;IEEE Transactions on Electron Devices;2024-06

2. A semi-circular T-shaped anode AlGaN/GaN Schottky barrier diode temperature sensor;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

3. Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study;Applied Physics Letters;2024-05-13

4. Research progress and prospect of GaN Schottky diodes;Journal of Physics D: Applied Physics;2023-12-04

5. A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure;Chip;2023-12

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