650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/8269808/08214234.pdf?arnumber=8214234
Cited by 59 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Research progress and prospect of GaN Schottky diodes;Journal of Physics D: Applied Physics;2023-12-04
2. A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure;Chip;2023-12
3. Influence of Upper Channel Thickness on InAlN/GaN/InAlN/GaN Double Channel HEMT;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
4. Comparing Electrical Performance of Lateral GaN Schottky Barrier Diode with A-Plane ($11\bar2 0$) and M-Plane ($1\bar1 00$) Nonpolar Sidewall Contact;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
5. 3D TACD Modelling of Multi-channel Tri-gate Normally-off AlGaN/GaN MOSHEMTs;2023 International Semiconductor Conference (CAS);2023-10-11
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