High Linearity AlGaN/GaN/Graded AlGaN/GaN Double Channel HEMTs for High/Low Voltage Applications
Author:
Affiliation:
1. School of Microelectronics, Xidian University,Xi'an,China
2. School of Advanced Materials and Nanotechnology, Xidian University,Xi'an,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10380804/10380975/10381059.pdf?arnumber=10381059
Reference11 articles.
1. High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency
2. Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact
3. High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination
4. GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage
5. Influence of the Dynamic Access Resistance in the$g_m$and$f_T$Linearity of AlGaN/GaN HEMTs
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