Influence of Upper Channel Thickness on InAlN/GaN/InAlN/GaN Double Channel HEMT
Author:
Affiliation:
1. Xidian University No.2,Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Xi'an,Shaanxi Province,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399699.pdf?arnumber=10399699
Reference17 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. First Demonstration of State-of-the-art GaN HEMTs for Power and RF Applications on A Unified Platform with Free-standing GaN Substrate and Fe/C Co-doped Buffer
3. 650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
4. Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor
5. Low-frequency noise properties of double channel AlGaN/GaN HEMTs
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