Improved Symmetry of Ferroelectric Switching in HZO Based MFM Capacitors Enabled by High Pressure Annealing
Author:
Affiliation:
1. College of Electronic Science and Technology, National University of Defense Technology, Changsha, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/9714452/09950063.pdf?arnumber=9950063
Reference26 articles.
1. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
2. Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfₓZr₁₋ₓO₂Capacitors
3. Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing
4. Effects of Annealing on Ferroelectric Hafnium–Zirconium–Oxide-Based Transistor Technology
5. In Situ Characterization of Ferroelectric HfO 2 During Rapid Thermal Annealing
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1. Inhibiting the imprint effect of the TiN/HZO/TiN ferroelectric capacitor by introducing a protective HfO2 layer;AIP Advances;2024-08-01
2. Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer Deposition;ACS Applied Electronic Materials;2024-06-24
3. Multistate Capability Improvement of BEOL Compatible FeFET by Introducing an Al2O3 Interlayer;IEEE Transactions on Electron Devices;2023-11
4. The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
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