In Situ Characterization of Ferroelectric HfO 2 During Rapid Thermal Annealing-Reference-Cited by-同舟云学术

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In Situ Characterization of Ferroelectric HfO 2 During Rapid Thermal Annealing

Published:2021-02-08 Issue:5 Volume:15 Page:2000598
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Narasimhan Vijay Kris¹^ORCID,McBriarty Martin E.¹,Passarello Donata²,Adinolfi Valerio¹,Toney Michael F.³,Mehta Apurva²,Littau Karl A.¹

Affiliation:

1. EMD Performance Materials 3011 North First Street San Jose CA 95134 USA

2. Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory 2575 Sand Hill Road Menlo Park CA 94025 USA

3. Department of Chemical and Biological Engineering University of Colorado Boulder Boulder CO 80309 USA

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000598

Reference30 articles.

1. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

2. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

3. Low-power linear computation using nonlinear ferroelectric tunnel junction memristors

4. Ferroelectricity in hafnium oxide thin films

5. Prediction of new metastable $$\hbox {HfO}_{2}$$ HfO 2 phases: toward understanding ferro- and antiferroelectric films

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1. In situ grazing incidence synchrotron x-ray diffraction studies on the wakeup effect in ferroelectric Hf0.5Zr0.5O2 thin films;Applied Physics Letters;2024-07-15

2. Impact of high-power impulse magnetron sputtering pulse width on the nucleation, crystallization, microstructure, and ferroelectric properties of hafnium oxide thin films;Journal of Vacuum Science & Technology A;2024-02-01

3. Critical Discussion of Ex situ and In situ TEM Measurements on Memristive Devices;Springer Series on Bio- and Neurosystems;2023-09-20

4. Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf1-xZrxO2 by first principle calculations;Applied Physics Reviews;2023-09-01

5. Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices;Materials Science in Semiconductor Processing;2023-06

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