Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact-Reference-Cited by-同舟云学术

Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

Published:2023 Issue: Volume:11 Page:15-21
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Kawanago Takamasa¹^ORCID,Kajikawa Ryosuke²,Mizutani Kazuto²,Tsai Sung-Lin²,Muneta Iriya²^ORCID,Hoshii Takuya²,Kakushima Kuniyuki²,Tsutsui Kazuo¹^ORCID,Wakabayashi Hitoshi²^ORCID

Affiliation:

1. FIRST, Tokyo Institute of Technology, Yokohama, Japan

2. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan

Funder

JST CREST

JSPS Grant-in-Aid for Scientific Research

Research Grant for Tokyo Tech Challenging Research Award

Samco Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/09963927.pdf?arnumber=9963927

Reference33 articles.

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2. Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures

3. Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study

4. Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application

5. First Demonstration of WSe2 CMOS Inverter with Modulable Noise Margin by Electrostatic Doping

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