Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures-Reference-Cited by-同舟云学术

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Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures

Published:2007-04-15 Issue:8 Volume:101 Page:084118
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ohmori K.,Ahmet P.,Yoshitake M.,Chikyow T.,Shiraishi K.,Yamabe K.,Watanabe H.,Akasaka Y.,Nara Y.,Chang K.-S.,Green M. L.,Yamada K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2721384

Reference22 articles.

1. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

2. Surface States and Rectification at a Metal Semi-Conductor Contact

3. Schottky Barrier Heights and the Continuum of Gap States

4. 2003 Symposium on VLSI Tech Digest;Hobbs C.,2003

5. Tech. Digest 2002 IEEE Int. Electron Devices Meeting;Koyama M.,2002

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2. Effective Work Function Computation of HfO₂/TiN/W Bi-metal System: Role of Barrier-TiN;2020 5th IEEE International Conference on Emerging Electronics (ICEE);2020-11-26

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4. Bias-Induced Interfacial Redox Reaction in Oxide-Based Resistive Random-Access Memory Structure;NIMS Monographs;2020

5. HAXPES Applications to Advanced Materials;Springer Series in Surface Sciences;2015-12-27

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