Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2711398
Reference9 articles.
1. Metal gate technology for nanoscale transistors—material selection and process integration issues
2. Electrical Characteristics of Metal-Oxide-Semiconductor Device with Sc Gate on Atomic-Layer-Deposited HfO2
3. Effective Work Function of Scandium Nitride Gate Electrodes on SiO2and HfO2
4. IEEE semiconductor interface specialists conference;Brown G. A.,2004
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