Control of Carrier Polarity and Schottky Barriers in Layered PdSe<sub>2</sub> Field-Effect Transistors-Reference-Cited by-同舟云学术

Control of Carrier Polarity and Schottky Barriers in Layered PdSe₂ Field-Effect Transistors

Published:2023-05-17 Issue:6 Volume:5 Page:3394-3402
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Li Miaomiao¹²,Luo Wei³^ORCID,Zhang Xiangzhe¹²,Zhu Mengjian¹²^ORCID,Peng Gang³,Zhu Zhihong¹²^ORCID,Qin Shiqiao¹²

Affiliation:

1. College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China

2. Nanhu Laser Laboratory, National University of Defense Technology, Changsha, Hunan 410073, China

3. College of Science, National University of Defense Technology, Changsha, Hunan 410073, China

Funder

Natural Science Foundation of?Hunan Province

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00401

Reference42 articles.

1. MoS 2 transistors with 1-nanometer gate lengths

2. Vertical MoS2 transistors with sub-1-nm gate lengths

3. Single-layer MoS2 transistors

4. Black phosphorus field-effect transistors

5. Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors

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