Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off
Author:
Affiliation:
1. Polytechnic Department of Engineering and Architecture, University of Udine, Via delle Scienze 206, 33100 Udine, Italy
2. Université Paris-Saclay, CNRS, C2N, F-91120 Palaiseau, France
Funder
Agence Nationale de la Recherche
Ministero dell'Istruzione, dell'Universit? e della Ricerca
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c00166
Reference72 articles.
1. Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 ( $M = {\rm Mo}$ , W; $X = {\rm S}$ , Se)
2. Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors
3. All MoS2-Based Large Area, Skin-Attachable Active-Matrix Tactile Sensor
4. Quantum engineering of transistors based on 2D materials heterostructures
5. Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors
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