Temperature-Dependent Narrow Width Effects of 28-nm CMOS Transistors for Cold Electronics

Author:

Tsai Ting1ORCID,Lin Horng-Chih1ORCID,Li Pei-Wen1ORCID

Affiliation:

1. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. TCAD analysis of conditions for DIBL parameter misestimation in cryogenic MOSFETs;Japanese Journal of Applied Physics;2024-09-02

2. Low-Overhead Triple-Node-Upset Self-Recoverable Latch Design for Ultra-Dynamic Voltage Scaling Application;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-06

3. Cryogenic Small Dimension Effects and Design-Oriented Scalable Compact Modeling of a 65-nm CMOS Technology;IEEE Journal of the Electron Devices Society;2024

4. Cryogenic CMOS for Quantum Processing: 5-nm FinFET-Based SRAM Arrays at 10 K;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-08

5. Temperature Impact on Remote Power Side-Channel Attacks on Shared FPGAs;2023 Design, Automation & Test in Europe Conference & Exhibition (DATE);2023-04

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