Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance-Reference-Cited by-同舟云学术

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Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

Published:2019-05 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE 11th International Memory Workshop (IMW)
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Author:

Francois T.,Coignus J.,Grenouillet L.,Barnes J.P.,Vaxelaire N.,Ferrand J.,Bottala-Gambetta I.,Gros-Jean M.,Jeannot S.,Boivin P.,Chiquet P.,Bocquet M.,Nowak E.,Gaillard F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8733385/8739248/08739664.pdf?arnumber=8739664

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges;Proceedings of the IEEE;2023-02

2. Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements;ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC);2022-09-19

3. Hafnium Oxide Nanostructured Thin Films: Electrophoretic Deposition Process and DUV Photolithography Patterning;Nanomaterials;2022-07-07

4. High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO₂: Si-Based 1T-1C FeRAM Arrays;IEEE Transactions on Electron Devices;2022-04

5. Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors;IEEE Journal of the Electron Devices Society;2022

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