Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Author:
Affiliation:
1. Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena, Italy
2. School of Electrical and Computer Engineering (ECE), Purdue University, West Lafayette, IN, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/5/10038314/10034743.pdf?arnumber=10034743
Reference201 articles.
1. Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack
2. Polarization retention on short, intermediate, and long time scales in ferroelectric thin films
3. Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors
4. Built‐in bias fields for retention stabilisation in hafnia‐based ferroelectric tunnel junctions
5. Depolarization of multidomain ferroelectric materials
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