Working Principles and Performance Optimization of Nonvolatile 6T2C-SRAM With Hafnia-Based Ferroelectric Capacitors-Reference-Cited by-同舟云学术

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Working Principles and Performance Optimization of Nonvolatile 6T2C-SRAM With Hafnia-Based Ferroelectric Capacitors

Published:2024-08 Issue:8 Volume:71 Page:4631-4636
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Yu¹^ORCID,Zhou Keji¹^ORCID,Jiang Hao²^ORCID,Huang Zhangcheng²^ORCID,Zhang Xumeng²^ORCID,Wei Yingfen²^ORCID,Liu Qi²^ORCID

Affiliation:

1. State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China

2. State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, and Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Strategic Priority Research Program of Chinese Academy of Sciences

MOE Innovation Platform

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10552780.pdf?arnumber=10552780

Reference28 articles.

1. Leakage current: Moore's law meets static power

2. Emerging Memory Technologies

3. A Low Active Leakage and High Reliability Phase Change Memory (PCM) Based Non-Volatile FPGA Storage Element

4. RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications

5. On the Restore Operation in MTJ-Based Nonvolatile SRAM Cells

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