Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors-Reference-Cited by-同舟云学术

Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors

Published:2022 Issue: Volume:10 Page:109-114
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Wu Cheng-Hung,Ronchi Nicolo'^ORCID,Wang Kuan-Chi,Wang Yu-Yun^ORCID,Mcmitchell Sean^ORCID,Banerjee Kaustuv,van Den Bosch Geert^ORCID,van Houdt Jan^ORCID,Wu Tian-Li^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09677029.pdf?arnumber=9677029

Reference24 articles.

1. Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

2. Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO2

3. Probing the Evolution of Electrically Active Defects in Doped Ferroelectric HfO2 during Wake-Up and Fatigue

4. Involvement of Unsaturated Switching in the Endurance Cycling of Si‐doped HfO 2 Ferroelectric Thin Films

5. Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory;Nanomaterials;2023-07-19

2. Demonstration of Large Polarization in Si-doped HfO₂ Metal–Ferroelectric–Insulator-Semiconductor Capacitors with Good Endurance and Retention;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17