Author:
Madan Raghav,Gupta Rishabh,Nirwan Bhawana Singh,Grover Anuj
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design Of High-Density Iso-Stable Asymmetric Memory Cell With Upto 10X Reduced Leakage;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19
2. Extensive Investigation on Even-Transistor-Configuration CMOS-based SRAM;Nanoscale Field Effect Transistors: Emerging Applications;2023-12-19
3. Design and Analysis of Low Power CMOS SRAM Cells 7T and 9T;2022 10th International Conference on Emerging Trends in Engineering and Technology - Signal and Information Processing (ICETET-SIP-22);2022-04-29
4. Retention Problem Free High Density 4T SRAM cell with Adaptive Body Bias in 18nm FD-SOI;2022 35th International Conference on VLSI Design and 2022 21st International Conference on Embedded Systems (VLSID);2022-02
5. Design Of High Density Memory Cell Library For Low Voltage Operation In 65nm LSTP Technology;2021 IEEE 18th India Council International Conference (INDICON);2021-12-19