Retention Problem Free High Density 4T SRAM cell with Adaptive Body Bias in 18nm FD-SOI-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Retention Problem Free High Density 4T SRAM cell with Adaptive Body Bias in 18nm FD-SOI

Published:2022-02 Issue: Volume: Page:
ISSN:
Container-title:2022 35th International Conference on VLSI Design and 2022 21st International Conference on Embedded Systems (VLSID)
language:
Short-container-title:

Author:

Kumar Chandan¹,Kumar Rahul²,Grover Anuj³,Chatterjee Shouri⁴,Dhori Kedar Janardan⁵,Rawat Harsh⁵

Affiliation:

1. IIT,Dept. of Electrical Engineering,Delhi

2. IIIT Delhi,Dept. of Electronics and Communication,Delhi,India

3. IIIT Delhi,Dept. of Electronics and Communication, Delhi, India

4. IIT Delhi,Dept. of Electrical Engineering,Delhi

5. ST Microelectronics Pvt. Ltd,Greater Noida,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9885796/9885734/09885984.pdf?arnumber=9885984

Reference17 articles.

1. Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs

2. A back biasing voltage generator for 28nm UTBB-FDSOI RVT CMOS digital circuits

3. A New SCR Structure With High Holding Voltage and Low ON-Resistance for 5-V Applications

4. Comparative analysis of SRAM cells in sub-threshold region in 65nm

5. A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon cross-coupled gated tunneling diodes;Chip;2024-06

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP