High Electromechanical Coupling SAW Resonators Based on a-Plane AlScN-AlN-Sapphire Substrate
Author:
Affiliation:
1. University of Science and Technology of China,School of Microelectronics,Hefei,China
2. Ultratrend Technologies Inc.,Hangzhou,China
Funder
Research and Development
Fundamental Research Funds for the Central Universities
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9855196/9855199/09855208.pdf?arnumber=9855208
Reference18 articles.
1. Finite Element Analysis of SAW Propagation Characteristics in c-plane (0001) and a-plane (11-20) AlScN Thin Films
2. Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al0.77Sc0.23N 11 2 ¯ 0 thin films
3. Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1−xN thin films
4. Aluminum nitride films on different orientations of sapphire and silicon
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1. Theoretical and Experimental Study of High‐Electromechanical‐Coupling Surface Acoustic Wave Resonators Based on A‐Plane (112¯0)$\left(\right. 11 \overset{\cdot}{2} 0 \left.\right)$ Al0.56Sc0.44N Films;physica status solidi (RRL) – Rapid Research Letters;2024-02-27
2. Machine-learned atomic cluster expansion potentials for fast and quantum-accurate thermal simulations of wurtzite AlN;Journal of Applied Physics;2024-02-22
3. High-Performance SAW Resonators Based on Single-crystalline a-Plane AlN Thin Films on Sapphire Substrates;2023 IEEE International Ultrasonics Symposium (IUS);2023-09-03
4. The Piezoelectricity of AlScN Thin Films under High-Pressure Regime;Physics of the Solid State;2023-06
5. AlScN-Based SAW Resonator with Improved RF Performance Using High-Resistivity Silicon Substrate;2023 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS);2023-05-15
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