AlScN-Based SAW Resonator with Improved RF Performance Using High-Resistivity Silicon Substrate-Reference-Cited by-同舟云学术

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AlScN-Based SAW Resonator with Improved RF Performance Using High-Resistivity Silicon Substrate

Published:2023-05-15 Issue: Volume: Page:
ISSN:
Container-title:2023 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS)
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Author:

Nagaraja Veda Sandeep¹,Khan Sambuddha¹,Nasser Mohammad²,McCarthy Brendan³,Li Ming-Huang⁴,Psychogiou Dimitra²

Affiliation:

1. Tyndall National Institute University College Cork,Micro & Nano Systems,Cork,Ireland,T12 R5CP

2. Tyndall National Institute University College Cork,Advanced RF Technologies,Cork,Ireland,T12 R5CP

3. Tyndall National Institute University College Cork,Speciality Product & Services,Cork,Ireland,T12 R5CP

4. Institute of NanoEngineering & MicroSystems National Tsing Hua University,Hsinchu,Taiwan

Funder

Science Foundation Ireland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10272029/10272034/10272056.pdf?arnumber=10272056

Reference6 articles.

1. Super-High-Frequency SAW Resonators on AlN/Diamond

2. High Electromechanical Coupling SAW Resonators Based on a-Plane AlScN-AlN-Sapphire Substrate

3. Epitaxial Aluminum Scandium Nitride Super High Frequency Acoustic Resonators

4. High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

5. Single Crystalline ScAlN Surface Acoustic Wave Resonators with Large Figure of Merit (Q × kₜ²)

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