Modeling Approach for Design Selection and Reliability Analysis of SiC Power Modules

Author:

Kovacevic-Badstuebner Ivana1,Race Salvatore1,Grossner Ulrike1

Affiliation:

1. ETH Zurich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland

Publisher

IEEE

Reference14 articles.

1. Finite element modeling predicts the effects of voids on thermal shock reliability and thermal resistance of power device;chang;Welding Journal,2006

2. Elastoplastic creep analysis of thermal stress and strain in aluminum interconnects of LSIs

3. Modelling the lifetime of aluminum heavy wire bond joints with a crack propagation law

4. Thermal anal-ysis of SiC power semiconductor packages using the structure function;race;Proc 7th Int Workshop Thermal Investigation ICs Systems (THERMINIC),2021

5. How long is your system going to last?;borucki;Bodo's Power Systems,2018

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Comparative Study on Power Cycling Capabilities of SiC Power MOSFET and Si IGBT Baseplate-Less Power Modules;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model;IEEE Transactions on Device and Materials Reliability;2024-03

3. Power Cycling of Sintered SiC Power MOSFET Baseplate-less Modules with Aluminum Oxide and Silicon Nitride Substrates;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

4. Extended Analysis of Power Cycling Behavior of TO-Packaged SiC Power MOSFETs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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