Modeling Approach for Design Selection and Reliability Analysis of SiC Power Modules
Author:
Affiliation:
1. ETH Zurich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9894046/9894054/09894199.pdf?arnumber=9894199
Reference14 articles.
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4. Thermal anal-ysis of SiC power semiconductor packages using the structure function;race;Proc 7th Int Workshop Thermal Investigation ICs Systems (THERMINIC),2021
5. How long is your system going to last?;borucki;Bodo's Power Systems,2018
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1. Comparative Study on Power Cycling Capabilities of SiC Power MOSFET and Si IGBT Baseplate-Less Power Modules;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model;IEEE Transactions on Device and Materials Reliability;2024-03
3. Power Cycling of Sintered SiC Power MOSFET Baseplate-less Modules with Aluminum Oxide and Silicon Nitride Substrates;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
4. Extended Analysis of Power Cycling Behavior of TO-Packaged SiC Power MOSFETs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
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