Extended Analysis of Power Cycling Behavior of TO-Packaged SiC Power MOSFETs-Reference-Cited by-同舟云学术

Extended Analysis of Power Cycling Behavior of TO-Packaged SiC Power MOSFETs

Published:2023-03 Issue: Volume: Page:
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Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Kovacevic-Badstuebner Ivana¹,Race Salvatore²,Grossner Ulrike¹,Mengotti Elena²,Kenel Christoph²,Bianda Enea²,Jormanainen Joni³

Affiliation:

1. ETH Zurich,Advanced Power Semiconductor Laboratory (APS),Zurich,Switzerland,8092

2. ABB Switzerland Ltd.,Corporate Research Center,Baden,Switzerland,5405

3. ABB Drives Oy,Helsinki,Finland,00380

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117650.pdf?arnumber=10117650

Reference17 articles.

1. Study of fatigue failure in Al-chip-metallization during power cycling

2. How materials hehaviour affects power electronics reliability;poech;Proc of 6th International Conference on Integrated Power Electronics Systems,2010

3. Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

4. High temperature behaviour and reliability of Al-Ribbon for automotive applications

5. Stress-Based Model for Lifetime Estimation of Bond Wire Contacts Using Power Cycling Tests and Finite-Element Modeling

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