Power Cycling of Sintered SiC Power MOSFET Baseplate-less Modules with Aluminum Oxide and Silicon Nitride Substrates-Reference-Cited by-同舟云学术

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Power Cycling of Sintered SiC Power MOSFET Baseplate-less Modules with Aluminum Oxide and Silicon Nitride Substrates

Published:2023-05-28 Issue: Volume: Page:
ISSN:
Container-title:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Kovacevic-Badstuebner Ivana¹,Mengotti Elena²,Natzke Philipp³,Race Salvatore³,Bianda Enea²,Jormanainen Joni⁴,Grossner Ulrike³

Affiliation:

1. ETH Zurich,Advanced Power Semiconductor (APS) Laboratory,Zurich,Switzerland

2. ABB Switzerland Ltd., Corporate Research Center,Baden,Switzerland

3. ETH Zurich,APS Laboratory,Zurich,Switzerland

4. ABB Drives Oy,Helsinki,Finland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147471.pdf?arnumber=10147471

Reference9 articles.

1. Fracture mechanical modeling for the stress analysis of DBC ceramics

2. Extended Analysis of Power Cycling Behavior of TO-Packaged SiC Power MOSFETs

3. Inorganic substrates for power electronics applications;miric;Heraeus Deutschland,2013

4. Joining and package technology for 175°C Tj increasing reliability in automotive applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices;Solid State Phenomena;2024-08-23

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