Elastoplastic creep analysis of thermal stress and strain in aluminum interconnects of LSIs-Reference-Cited by-同舟云学术

Elastoplastic creep analysis of thermal stress and strain in aluminum interconnects of LSIs

Published:1994-03 Issue:3 Volume:77 Page:93-105
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Hiraoka Kazunori

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference15 articles.

1. , and . Reliability Implications of Nitrogen Contamination During Deposition of Sputtered Aluminum Silicon Metal Lines. Proc. 22nd Annu. Int. Reliability Physics Symp., IEEE, pp. 1–5 (1984).

2. , , , , and . New Failure Mechanism in Sputtered Aluminum-Silicon Films. Proc. 22nd Annu. Int. Reliability Physics Symp., IEEE, pp. 6–8.

3. and . The Influence of Stress on Aluminum Conductor Life. Proc. 23rd Annu. Int. Reliability Physics Symp., IEEE, pp. 142–147 (1985).

4. , and . Stress Induced Voids in Aluminum Interconnects During IC Processing. Proc. 23rd Annu. Int. Reliability Physics Symp., IEEE, pp. 126–137.

5. Stress-induced grain boundary fractures in Al–Si interconnects

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