Research on the technique of accurately measuring thermal resistance of SiC MOSFET-Reference-Cited by-同舟云学术

Research on the technique of accurately measuring thermal resistance of SiC MOSFET

Published:2023-02-07 Issue: Volume: Page:
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Container-title:2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Liu Ao¹,Zhang Guobin²,Liu Tao²,Li Shaohong²,Zhang Teng²,Huang Runhua²,Bai Song²,Xu Shen¹,Sun Weifeng¹

Affiliation:

1. Southeast University,National ASIC System Engineering Research Center,Nanjing,China

2. Nanjing Electronnic Devices Institute,State Key Laboratory of Wide-Bandgap Semiconduetor Power Electronic Device,Nanjing Electronic Devices,Nanjing,China,210016

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10070854/10070925/10070926.pdf?arnumber=10070926

Reference5 articles.

1. Optimisation of the carrier lifetime profile in 1.2kV planar and trench SiC MOSFETs

2. Investigation of threshold voltage stability of SiC MOSFETs;dethard;IEEE 30th ISPSD,2018

3. SiC MOSFET oxide-trap two-way tunneling model

4. JEDEC Standard JESD51-14 : “Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Through a Single Path,0

5. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs;thomas;Microelectronics Reliability,2018

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1. Thermal Characterization of Packaged SiC Devices for High-Temperature Applications;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04