SiC MOSFET oxide-trap two-way tunneling model-Reference-Cited by-同舟云学术

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SiC MOSFET oxide-trap two-way tunneling model

Published:2011-12 Issue: Volume: Page:
ISSN:
Container-title:2011 International Semiconductor Device Research Symposium (ISDRS)
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Author:

Lelis Aivars,Habersat Dan,Green Ron,Goldsman Neil

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6128902/6135126/06135139.pdf?arnumber=6135139

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current;IEEE Transactions on Power Electronics;2024-08

2. Research on the technique of accurately measuring thermal resistance of SiC MOSFET;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

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